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| MBR4050PT thru MBR4060PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode MBR4050PT MBR4060PT Symbol I(AV) IFSM dv/dt VRRM V 50 60 VRMS V 35 42 VDC V 50 60 J K L M N Characteristics Maximum Average Forward Rectified Current @TC=125oC Maximum Ratings 40 400 10000 IF=20A IF=20A IF=40A IF=40A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.80 0.70 1.0 100 1.4 700 -55 to +150 -55 to +175 Unit A A V/us Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) VF V IR ROJC CJ TJ TSTG Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) mA o C/W pF o o Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-247AD molded plastic * Polarity: As marked on the body * Weight: 0.2 ounces, 5.6 grams * Mounting position: Any MBR4050PT thru MBR4060PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers |
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